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portada Cmos Gate-Stack Scaling - Materials, Interfaces and Reliability Implications: 1155 (Mrs Proceedings)
Type
Physical Book
Publisher
Author
Year
2009
Language
English
Pages
194
Format
Hardcover
ISBN
1605111287
ISBN13
9781605111285
Edition No.
1
Categories

Cmos Gate-Stack Scaling - Materials, Interfaces and Reliability Implications: 1155 (Mrs Proceedings)

Butterbaugh, J. (Author) · Cambridge University Press · Hardcover

Cmos Gate-Stack Scaling - Materials, Interfaces and Reliability Implications: 1155 (Mrs Proceedings) - Butterbaugh, J.

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Synopsis "Cmos Gate-Stack Scaling - Materials, Interfaces and Reliability Implications: 1155 (Mrs Proceedings) "

To address the increasing demands of device scaling, new materials are being introduced into conventional Si CMOS processing at an unprecedented rate. Presentations collected here focus on understanding, from a chemistry and materials perspective, the mechanism of interface formation and defects at interfaces, for both conventional Si and alternative channel (Ge or III-V) systems. Several papers address reliability concerns for high-k/metal gate (basic physical models, charge trapping, etc.), while others cover characterization of the thin films and interfaces which comprise the gate stack. Topics include: advanced Si-based gate stacks; and alternate channel materials.

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